Sample 44

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
15	7	Si wafer - not bonded	50	0	5.0	60	500	20	10	44.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 9.147 um
Calculated remaining resist as 8.25um, indicating an erosion of 0.49um in 10 minutes of etching
This equates to an erosion rate of 49 nm/min
The etch depth of 0.90um in 10 mins indicates an etch rate of 90.0nm/min
The selectivity is therefore 1.82:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	9.147100
Remaining resist (um)	8.247100
Semiconductor etched(um)	0.900000
Etch rate (nm/min)	90.000000
Erosion rate (nm/min)	49.390000
Selectivity	1.822231